| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| K4H560438B-TCA0 | 256 Mb DDR SDRAM. Version 0.3, 100 MHz, speed 10ns@CL2. | Samsung-Electronic | - | 66 | 0°C | 70°C | 658 K |
| K4H560438B-TCA2 | 256 Mb DDR SDRAM. Version 0.3, 133 MHz, speed 7.5ns@CL2. | Samsung-Electronic | - | 66 | 0°C | 70°C | 658 K |
| K4H560438B-TCB0 | 256 Mb DDR SDRAM. Version 0.3, 133 MHz, speed 7.5ns@CL2.5. | Samsung-Electronic | - | 66 | 0°C | 70°C | 658 K |
| K4H560438B-TLA0 | 256 Mb DDR SDRAM. Version 0.3, 100 MHz, speed 10ns@CL2. | Samsung-Electronic | - | 66 | 0°C | 70°C | 658 K |
| K4H560438B-TLA2 | 256 Mb DDR SDRAM. Version 0.3, 133 MHz, speed 7.5ns@CL2. | Samsung-Electronic | - | 66 | 0°C | 70°C | 658 K |
| K4H560438B-TLB0 | 256 Mb DDR SDRAM. Version 0.3, 133 MHz, speed 7.5ns@CL2.5. | Samsung-Electronic | - | 66 | 0°C | 70°C | 658 K |
| K4S560432A-TC/L1L | 16M x 4bit x 4 banks synchronous DRAM LVTTL. 256 Mbit SDRAM. Max freq. 100 MHz (CL=3), interface LVTTL. | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 127 K |
| K4S560432B-TC/L1H | 16M x 4bit x 4 banks synchronous DRAM LVTTL. 256 Mbit SDRAM. Max freq. 100 MHz (CL=2), interface LVTTL. | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 130 K |
| K4S560432B-TC/L1L | 16M x 4bit x 4 banks synchronous DRAM LVTTL. 256 Mbit SDRAM. Max freq. 100 MHz (CL=3), interface LVTTL. | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 130 K |
| K4S560432B-TC/L75 | 16M x 4bit x 4 banks synchronous DRAM LVTTL. 256 Mbit SDRAM. Max freq. 133 MHz (CL=3), interface LVTTL. | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 130 K |
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