| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| NDB6060L | Length/Height 4.69 mm Width 10.54 mm Depth 15.49 mm Power dissipation 100 W Transistor polarity N Channel Current Id cont. 48 A Voltage Vgs th max. 2 V (D2-Pak) Voltage Vds max 60 V | Fairchild-Semiconductor | - | - | - | - | 361 K |
| RBV606D | 600 V, 6 A, silicon bridge rectifier | distributor | RBV25 | 4 | -40°C | 150°C | 42 K |
| STU6062 | Working peak reverse voltage: 50.2 V, 1 mA, 600 W surface mount transient voltage suppressor | distributor | SMB | 2 | -55°C | 150°C | 28 K |
| STU6068 | Working peak reverse voltage: 55.1 V, 1 mA, 600 W surface mount transient voltage suppressor | distributor | SMB | 2 | -55°C | 150°C | 28 K |
| STU606I | Working peak reverse voltage: 5.50 V, 10 mA, 600 W surface mount transient voltage suppressor | distributor | SMB | 2 | -55°C | 150°C | 28 K |
| VTB6061CIE | Process photodiode. Sp = 120 nA/fc at H = 1.0fc, Sp = 11nA/lux at H = 1.0 lux. | distributor | - | 2 | -54°C | 50°C | 30 K |
| VTB6061J | Process photodiode. Isc = 350 microA, Voc = 490 mV at H = 100 fc, 2850 K. | distributor | - | 2 | -40°C | 110°C | 33 K |
| VTB6061UV | Process photodiode. Isc = 350 microA, Voc = 490 mV at H = 100 fc, 2850 K. | distributor | - | 3 | -40°C | 110°C | 33 K |
| VTB6061UVJ | Process photodiode. Isc = 350 microA, Voc = 490 mV at H = 100 fc, 2850 K. | distributor | - | 3 | -40°C | 110°C | 32 K |
| VTP6060 | Process photodiodes | distributor | - | 2 | -40°C | 110°C | 30 K |
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