Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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5962D9960701TXA | 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si) | distributor | Flatpack shielded | 36 | -55°C | 125°C | 127 K |
5962D9960701TXC | 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 1E4(10krad)(Si) | distributor | Flatpack shielded | 36 | -55°C | 125°C | 127 K |
5962D9960701TXX | 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 1E4(10krad)(Si) | distributor | Flatpack shielded | 36 | -55°C | 125°C | 127 K |
5962D9960702TXA | 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si) | distributor | Flatpack shielded | 36 | -40°C | 125°C | 127 K |
5962D9960702TXC | 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 1E4(10krad)(Si) | distributor | Flatpack shielded | 36 | -40°C | 125°C | 127 K |
5962D9960703TXA | 512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si) | distributor | Flatpack shielded | 36 | -55°C | 125°C | 127 K |
5962D9960703TXX | 512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 1E4(10krad)(Si) | distributor | Flatpack shielded | 36 | -55°C | 125°C | 127 K |
5962D9960704TXC | 512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 1E4(10krad)(Si) | distributor | Flatpack shielded | 36 | -40°C | 125°C | 127 K |
5962D9960704TXX | 512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 1E4(10krad)(Si) | distributor | Flatpack shielded | 36 | -40°C | 125°C | 127 K |
HER607G | 6.0 A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 800V. | distributor | P600 | 2 | -65°C | 150°C | 171 K |
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