| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 5962L9960704QUX | 512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish factory option. Total dose 5E4(50krad)(Si) | distributor | Ceramic flatpack | 36 | -40°C | 125°C | 127 K |
| 5962L9960704QUX | 512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish factory option. Total dose 5E4(50krad)(Si) | distributor | Ceramic flatpack | 36 | -40°C | 125°C | 127 K |
| APM2607CC-TR | 30 V, P-channel enhancement mode MOSFET | distributor | - | 8 | -55°C | 150°C | 598 K |
| APM2607CC-TR | 30 V, P-channel enhancement mode MOSFET | distributor | - | 8 | -55°C | 150°C | 598 K |
| IRFB3607PBF | 75V Single N-Channel HEXFET Power MOSFET | International-Rectifier | - | | - | - | 426 K |
| IRFR3607PBF
| 75V Single N-Channel HEXFET Power MOSFET | International-Rectifier | - | | - | - | 426 K |
| IRFS3607PBF
| 75V Single N-Channel HEXFET Power MOSFET | International-Rectifier | - | | - | - | 426 K |
| IRFSL3607PBF | 75V Single N-Channel HEXFET Power MOSFET | International-Rectifier | - | | - | - | 426 K |
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