Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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K4S160822DT-G/F10 | 1M x 8bit x 2 banks synchronous DRAM. 2M x 8 SDRAM. Max freq. 100 MHz, interface LVTTL. | Samsung-Electronic | TSOP (II) | 44 | 0°C | 70°C | 1 M |
K4S160822DT-G/F7 | 1M x 8bit x 2 banks synchronous DRAM. 2M x 8 SDRAM. Max freq. 143 MHz, interface LVTTL. | Samsung-Electronic | TSOP (II) | 44 | 0°C | 70°C | 1 M |
K4S160822DT-G/F8 | 1M x 8bit x 2 banks synchronous DRAM. 2M x 8 SDRAM. Max freq. 125 MHz, interface LVTTL. | Samsung-Electronic | TSOP (II) | 44 | 0°C | 70°C | 1 M |
K4S160822DT-G/FH | 1M x 8bit x 2 banks synchronous DRAM. 2M x 8 SDRAM. Max freq. 100 MHz, interface LVTTL. | Samsung-Electronic | TSOP (II) | 44 | 0°C | 70°C | 1 M |
K4S160822DT-G/FL | 1M x 8bit x 2 banks synchronous DRAM. 2M x 8 SDRAM. Max freq. 100 MHz, interface LVTTL. | Samsung-Electronic | TSOP (II) | 44 | 0°C | 70°C | 1 M |
K4S560832A-TC/L1H | 8M x 8bit x 4 banks synchronous DRAM LVTTL. 256 Mbit SDRAM. Max freq. 100 MHz (CL=2), interface LVTTL. | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 126 K |
K4S560832A-TC/L1L | 8M x 8bit x 4 banks synchronous DRAM LVTTL. 256 Mbit SDRAM. Max freq. 100 MHz (CL=3), interface LVTTL. | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 126 K |
K4S560832A-TC/L75 | 8M x 8bit x 4 banks synchronous DRAM LVTTL. 256 Mbit SDRAM. Max freq. 133 MHz (CL=3), interface LVTTL. | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 126 K |
K4S560832B-TC/L1H | 8M x 8bit x 4 banks synchronous DRAM LVTTL. 256 Mbit SDRAM. Max freq. 100 MHz (CL=2), interface LVTTL. | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 131 K |
K4S560832B-TC/L75 | 8M x 8bit x 4 banks synchronous DRAM LVTTL. 256 Mbit SDRAM. Max freq. 133 MHz (CL=3), interface LVTTL. | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 131 K |
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