| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| K4E160811D-B | 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. | Samsung-Electronic | SOJ | 28 | 0°C | 70°C | 257 K |
| K4E160811D-F | 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. | Samsung-Electronic | - | 28 | 0°C | 70°C | 257 K |
| K4E160812D-B | 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. | Samsung-Electronic | SOJ | 28 | 0°C | 70°C | 257 K |
| K4H560838B-TCA0 | 256 Mb DDR SDRAM. Version 0.3, 100 MHz, speed 10ns@CL2. | Samsung-Electronic | - | 66 | 0°C | 70°C | 658 K |
| K4H560838B-TCA2 | 256 Mb DDR SDRAM. Version 0.3, 133 MHz, speed 7.5ns@CL2. | Samsung-Electronic | - | 66 | 0°C | 70°C | 658 K |
| K4H560838B-TCB0 | 256 Mb DDR SDRAM. Version 0.3, 133 MHz, speed 7.5ns@CL2.5. | Samsung-Electronic | - | 66 | 0°C | 70°C | 658 K |
| K4H560838B-TLA0 | 256 Mb DDR SDRAM. Version 0.3, 100 MHz, speed 10ns@CL2. | Samsung-Electronic | - | 66 | 0°C | 70°C | 658 K |
| K4H560838B-TLA2 | 256 Mb DDR SDRAM. Version 0.3, 133 MHz, speed 7.5ns@CL2. | Samsung-Electronic | - | 66 | 0°C | 70°C | 658 K |
| K4H560838B-TLB0 | 256 Mb DDR SDRAM. Version 0.3, 133 MHz, speed 7.5ns@CL2.5. | Samsung-Electronic | - | 66 | 0°C | 70°C | 658 K |
| K4S560832B-TC/L1L | 8M x 8bit x 4 banks synchronous DRAM LVTTL. 256 Mbit SDRAM. Max freq. 100 MHz (CL=3), interface LVTTL. | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 131 K |
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