| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| K4E660812C-TC-45 | 8M x 8bit CMOS dynamic RAM with extended data out, 45ns | Samsung-Electronic | TSOP II | 32 | 0°C | 70°C | 416 K |
| K4E660812C-TCL-45 | 8M x 8bit CMOS dynamic RAM with extended data out, 45ns | Samsung-Electronic | TSOP II | 32 | 0°C | 70°C | 416 K |
| K4E660812C-TCL-5 | 8M x 8bit CMOS dynamic RAM with extended data out, 50ns | Samsung-Electronic | TSOP II | 32 | 0°C | 70°C | 416 K |
| K4E660812C-TCL-5 | 8M x 8bit CMOS dynamic RAM with extended data out, 50ns | Samsung-Electronic | TSOP II | 32 | 0°C | 70°C | 416 K |
| K4S560832C-TC/L1H | 8M x 8bit x 4 banks synchronous DRAM LVTTL, 100MHz | Samsung-Electronic | TSOP | 54 | 0°C | 70°C | 113 K |
| K4S560832C-TC/L1L | 8M x 8bit x 4 banks synchronous DRAM LVTTL, 100MHz | Samsung-Electronic | TSOP | 54 | 0°C | 70°C | 113 K |
| K4S560832C-TC/L75 | 8M x 8bit x 4 banks synchronous DRAM LVTTL, 133MHz | Samsung-Electronic | TSOP | 54 | 0°C | 70°C | 113 K |
| K4S560832C-TC/L7C | 8M x 8bit x 4 banks synchronous DRAM LVTTL, 133MHz | Samsung-Electronic | TSOP | 54 | 0°C | 70°C | 113 K |
| K4S560832D-TC/L75 | 8M x 8bit x 4 banks synchronous DRAM LVTTL, 133MHz | Samsung-Electronic | TSOP II | 54 | 0°C | 70°C | 118 K |
| K4S560832D-TC/L7C | 8M x 8bit x 4 banks synchronous DRAM LVTTL, 133MHz | Samsung-Electronic | TSOP II | 54 | 0°C | 70°C | 118 K |
| TS608R | 800 V, 6 A, glass passivated junction fast switching rectifier | distributor | - | 2 | -55°C | 150°C | 150 K |
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