Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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HER608G | 6.0 A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 1000V. | distributor | P600 | 2 | -65°C | 150°C | 171 K |
K4S560832D-NC/L1H | 8M x 8bit x 4 banks synchronous DRAM LVTTL, 100MHz | Samsung-Electronic | sTSOPII | 54 | 0°C | 70°C | 80 K |
K4S560832D-NC/L1L | 8M x 8bit x 4 banks synchronous DRAM LVTTL, 100MHz | Samsung-Electronic | sTSOPII | 54 | 0°C | 70°C | 80 K |
K4S560832D-NC/L75 | 8M x 8bit x 4 banks synchronous DRAM LVTTL, 133MHz | Samsung-Electronic | sTSOPII | 54 | 0°C | 70°C | 80 K |
K4S560832D-NC/L7C | 8M x 8bit x 4 banks synchronous DRAM LVTTL, 133MHz | Samsung-Electronic | sTSOPII | 54 | 0°C | 70°C | 80 K |
K4S560832D-TC/L1H | 8M x 8bit x 4 banks synchronous DRAM LVTTL, 100MHz | Samsung-Electronic | TSOP II | 54 | 0°C | 70°C | 118 K |
K4S560832D-TC/L1L | 8M x 8bit x 4 banks synchronous DRAM LVTTL, 100MHz | Samsung-Electronic | TSOP II | 54 | 0°C | 70°C | 118 K |
K4S560832E-NC75 | 32M x 8 SDRAM, LVTTL, 133MHz | Samsung-Electronic | sTSOP | 54 | 0°C | 70°C | 207 K |
K4S560832E-NCL75 | 32M x 8 SDRAM, LVTTL, 133MHz | Samsung-Electronic | sTSOP | 54 | 0°C | 70°C | 207 K |
K4S560832E-TC75 | 32M x 8 SDRAM, LVTTL, 133MHz | Samsung-Electronic | TSOP | 54 | 0°C | 70°C | 198 K |
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