| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| ADG609BN | 13V; 20-40mA; 4/8-channel high performance analog multiplexer | Analog-Devices | DIP | 16 | -40°C | 85°C | 127 K |
| ADG609BR | 13V; 20-40mA; 4/8-channel high performance analog multiplexer | Analog-Devices | SOIC | 16 | -40°C | 85°C | 127 K |
| ADG609BRU | 13V; 20-40mA; 4/8-channel high performance analog multiplexer | Analog-Devices | TSSOP | 16 | -40°C | 85°C | 127 K |
| AR609LTS06 | 600 V, 6825 A, 60 kA rectifier diode | distributor | - | 2 | -30°C | 190°C | 165 K |
| AR609S06 | 600 V, 5380 A, 50.4 kA rectifier diode | distributor | - | 2 | -30°C | 190°C | 304 K |
| HUF76609D3 | 10A, 100V, 0.165 Ohm, N-Channel, Logic Level UltraFET® Power MOSFET | Fairchild-Semiconductor | - | - | - | - | 220 K |
| HUF76609D3S | 10A, 100V, 0.165 Ohm, N-Channel, Logic Level UltraFET® Power MOSFET | Fairchild-Semiconductor | - | - | - | - | 220 K |
| HUFA76609D3 | 10A, 100V, 0.165 Ohm, N-Channel, Logic Level UltraFET® Power MOSFET | Fairchild-Semiconductor | - | - | - | - | 209 K |
| NTE6093 | Silicon dual schottky barrier rectifier. Max peak repetitive reverse voltage 60V. Average rectified forward current(per diode) 30A. | distributor | TO3P | 3 | -65°C | 125°C | 18 K |
| NTE6094 | Silicon schottky barrier rectifier. Peak repetitive reverse voltage 45V. | distributor | DO5 | 2 | -65°C | 150°C | 19 K |
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