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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
GLT4160L04-40J340ns; 4K x 4 CMOS dynamic RAM with extended data outputdistributorSOJ260°C70°C576 K
GLT4160L04-40TC40ns; 4K x 4 CMOS dynamic RAM with extended data outputdistributorTSOP260°C70°C576 K
GLT5160L16-10TC100 MHz; 16M (2-bank x 524288-word x 16 bit) synchronous DRAMdistributorTSOP500°C70°C6 M
ISPLS1024-60LH/88360 MHz in-system prommable high density PLDLattice-Semiconductor-CorporationLQFP68-55°C125°C147 K
ISPLSI1032-60LG/88360 MHz in-system prommable high density PLDLattice-Semiconductor-CorporationCPGA84-55°C125°C151 K
ISPLSI81080V-60LB27260 MHz 3.3V in-system prommable superBIG high density PLDLattice-Semiconductor-CorporationBGA272-55°C125°C333 K
ISPLSI81080V-60LB49260 MHz 3.3V in-system prommable superBIG high density PLDLattice-Semiconductor-CorporationBGA492-55°C125°C333 K
ISPLSI8600V-60LB27260 MHz 3.3V in-system prommable superBIG high density PLDLattice-Semiconductor-CorporationBGA272-55°C125°C333 K
ISPLSI8600V-60LB49260 MHz 3.3V in-system prommable superBIG high density PLDLattice-Semiconductor-CorporationBGA492-55°C125°C333 K
ISPLSI8840-60LB43260 MHz 3.3V in-system prommable superBIG high density PLDLattice-Semiconductor-CorporationBGA432-55°C125°C304 K
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