| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2001-6101-00 | DC-18 GHz, SMA termination | M-A-COM---manufacturer-of-RF | - | - | -54°C | 125°C | 168 K |
| 2020-6610-20 | 2-4 GHz, directional couplers mini, octave bandwidth | M-A-COM---manufacturer-of-RF | - | - | - | - | 192 K |
| IRF9610S | HEXFET power MOSFET. VDSS = -200V, RDS(on) = 3.0 Ohm, ID = -1.8A | International-Rectifier | - | 3 | -55°C | 150°C | 163 K |
| LTI610F | 1000 V three phase bridge 30-40 A forward current, 150 ns recovery time | distributor | - | 5 | -55°C | 150°C | 215 K |
| LTI610UF | 1000 V three phase bridge 30-40 A forward current, 70 ns recovery time | distributor | - | 5 | -55°C | 150°C | 215 K |
| LTI610UFT | 1000 V three phase bridge 30-40 A forward current, 70 ns recovery time | distributor | - | 5 | -55°C | 150°C | 220 K |
| MAAM26100 | 2-6.5 GHz, power GaAs MMIC amplifier | M-A-COM---manufacturer-of-RF | - | - | - | - | 193 K |
| MAAM26100-P1 | 2-6 GHz, power GaAs MMIC amplifier | M-A-COM---manufacturer-of-RF | - | 10 | - | - | 71 K |
| MBR16100 | 100 V, Schottky die | distributor | - | - | -65°C | 125°C | 10 M |
| SB16100 | 100 V, Schottky die | distributor | - | - | -65°C | 125°C | 10 M |
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