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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
2N6107PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 70Vdc, Vcb = 80Vdc, Veb = 5Vdc Ic = 7Adc, PD = 40W.distributor-3-65°C150°C47 K
GSD610151200 V rectifier diodedistributor----37 K
SB16100DCDDPak surfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 100 V. Max average forward rectified current at Tc = 90degC 16.0 A.distributor-3-50°C150°C56 K
SD6100CSDPak surfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 100 V. Max average forward rectified current at Tc = 75degC 6.0 A.distributor-4-55°C125°C34 K
SD6100CTSchottky barrier rectifier. Max recurrent peak reverse voltage 100 V. Max average forward rectified current at Tc = 75degC 6.0 A.distributor-4-55°C125°C41 K
SFH610-26V; 50mA optically coupled isolatordistributor-4-55°C100°C48 K
SFH610-36V; 50mA optically coupled isolatordistributor-4-55°C100°C48 K
SFH610-46V; 50mA optically coupled isolatordistributor-4-55°C100°C48 K
TC626100VABTemperature limit switch.TelCom-Semiconductor-Inc--3-55°C125°C33 K
TC626100VZBTemperature limit switch.TelCom-Semiconductor-Inc--3-55°C125°C33 K
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