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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
BS616UV1610BC70/100ns 25mA 1.8-2.3V ultra low power/voltage CMOS SRAM 1M x 16bitdistributorBGA480°C70°C217 K
BS616UV1610BI70/100ns 25mA 1.8-2.3V ultra low power/voltage CMOS SRAM 1M x 16bitdistributorBGA48-40°C85°C217 K
BS616UV1610FI70/100ns 25mA 1.8-2.3V ultra low power/voltage CMOS SRAM 1M x 16bitdistributorBGA48-40°C85°C217 K
G2A061000General purpose reed retay. Nominal voltage 6 (VDC).distributor-6-40°C85°C33 K
MMBD6100LT170 V, monolithic dual switching diodedistributor-3-55°C150°C54 K
SB16100DC100 V, 16 A, D2PAK surface mount schottky barrier rectifierdistributor-3-50°C150°C148 K
SB16100F100 V, 16 A, isolation schottky barrier rectifierdistributorTO3-50°C150°C148 K
SB16100F100 V, 16 A, isolation schottky barrier rectifierdistributorTO3-50°C150°C148 K
T9G0061003DH600V, 1000A phase control single thyristordistributor----491 K
T9G0161003DH1600V, 1000A phase control single thyristordistributor----491 K
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