| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| K9F5616U0B-DCB0 | 16M x 16 bit NAND flash memory, 2.7 - 3.6V | Samsung-Electronic | TBGA | 63 | 0°C | 70°C | 604 K |
| K9F5616U0B-HCB0 | 16M x 16 bit NAND flash memory, 2.7 - 3.6V | Samsung-Electronic | TBGA | 63 | 0°C | 70°C | 604 K |
| K9F5616U0B-PCB0 | 16M x 16 bit NAND flash memory, 2.7 - 3.6V | Samsung-Electronic | TSOP I | 48 | 0°C | 70°C | 604 K |
| K9F5616U0B-PIB0 | 16M x 16 bit NAND flash memory, 2.7 - 3.6V | Samsung-Electronic | TSOP I | 48 | -40°C | 85°C | 604 K |
| K9F5616U0B-YCB0 | 16M x 16 bit NAND flash memory, 2.7 - 3.6V | Samsung-Electronic | TSOP I | 48 | 0°C | 70°C | 604 K |
| K9F5616U0B-YIB0 | 16M x 16 bit NAND flash memory, 2.7 - 3.6V | Samsung-Electronic | TSOP I | 48 | -40°C | 85°C | 604 K |
| PJD1616ACT | 120V; 1A; NPN epitaxial silicon transistor | distributor | - | 3 | -20°C | 85°C | 220 K |
| PJD1616ACX | 120V; 1A; NPN epitaxial silicon transistor | distributor | - | 3 | -20°C | 85°C | 220 K |
| PJD1616CCT | 120V; 0.5A; NPN epitaxial silicon transistor | distributor | - | 3 | -20°C | 85°C | 953 K |
| PJD1616CCX | 120V; 0.5A; NPN epitaxial silicon transistor | distributor | - | 3 | -20°C | 85°C | 953 K |
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