| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IS62VV25616L-10M | 256K x 16 low voltage, 1.8V ultra-low power CMOS static RAM | distributor | BGA | 48 | 0°C | 70°C | 89 K |
| IS62VV25616L-70M | 256K x 16 low voltage, 1.8V ultra-low power CMOS static RAM | distributor | BGA | 48 | 0°C | 70°C | 89 K |
| IS62VV25616L-85M | 256K x 16 low voltage, 1.8V ultra-low power CMOS static RAM | distributor | BGA | 48 | 0°C | 70°C | 89 K |
| IS62VV25616LL-10M | 256K x 16 low voltage, 1.8V ultra-low power CMOS static RAM | distributor | BGA | 48 | 0°C | 70°C | 89 K |
| IS62VV25616LL-70M | 256K x 16 low voltage, 1.8V ultra-low power CMOS static RAM | distributor | BGA | 48 | 0°C | 70°C | 89 K |
| K4S161622D-TC/L10 | 512K x 16bit x 2 banks synchronous DRAM. Max freq. 100 MHz, interface LVTTL. | Samsung-Electronic | TSOP (II) | 50 | 0°C | 70°C | 1 M |
| K4S161622D-TC/L55 | 512K x 16bit x 2 banks synchronous DRAM. Max freq. 183 MHz, interface LVTTL. | Samsung-Electronic | TSOP (II) | 50 | 0°C | 70°C | 1 M |
| K4S161622D-TC/L60 | 512K x 16bit x 2 banks synchronous DRAM. Max freq. 166 MHz, interface LVTTL. | Samsung-Electronic | TSOP (II) | 50 | 0°C | 70°C | 1 M |
| K4S161622D-TC/L70 | 512K x 16bit x 2 banks synchronous DRAM. Max freq. 143 MHz, interface LVTTL. | Samsung-Electronic | TSOP (II) | 50 | 0°C | 70°C | 1 M |
| K4S161622D-TC/L80 | 512K x 16bit x 2 banks synchronous DRAM. Max freq. 125 MHz, interface LVTTL. | Samsung-Electronic | TSOP (II) | 50 | 0°C | 70°C | 1 M |
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