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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
K4H561638B-TCA2256 Mb DDR SDRAM. Version 0.3, 133 MHz, speed 7.5ns@CL2.Samsung-Electronic-660°C70°C658 K
K4H561638B-TCB0256 Mb DDR SDRAM. Version 0.3, 133 MHz, speed 7.5ns@CL2.5.Samsung-Electronic-660°C70°C658 K
K4H561638B-TLA2256 Mb DDR SDRAM. Version 0.3, 133 MHz, speed 7.5ns@CL2.Samsung-Electronic-660°C70°C658 K
K4S561632A-TC/L1H4M x 16bit x 4 banks synchronous DRAM. 256 Mbit SDRAM. Max freq. 100 MHz (CL=2), interface LVTTL.Samsung-ElectronicTSOP (II)540°C70°C127 K
K4S561632A-TC/L1L4M x 16bit x 4 banks synchronous DRAM. 256 Mbit SDRAM. Max freq. 100 MHz (CL=3), interface LVTTL.Samsung-ElectronicTSOP (II)540°C70°C127 K
K4S561632A-TC/L754M x 16bit x 4 banks synchronous DRAM. 256 Mbit SDRAM. Max freq. 133 MHz (CL=3), interface LVTTL.Samsung-ElectronicTSOP (II)540°C70°C127 K
K4S561632A-TC/L804M x 16bit x 4 banks synchronous DRAM. 256 Mbit SDRAM. Max freq. 125 MHz (CL=3), interface LVTTL.Samsung-ElectronicTSOP (II)540°C70°C127 K
K4S561632B-TC/L1H4M x 16bit x 4 banks synchronous DRAM. 256 Mbit SDRAM. Max freq. 100 MHz (CL=2), interface LVTTL.Samsung-ElectronicTSOP (II)540°C70°C131 K
K4S561632B-TC/L1L4M x 16bit x 4 banks synchronous DRAM. 256 Mbit SDRAM. Max freq. 100 MHz (CL=3), interface LVTTL.Samsung-ElectronicTSOP (II)540°C70°C131 K
K4S561632B-TC/L754M x 16bit x 4 banks synchronous DRAM. 256 Mbit SDRAM. Max freq. 133 MHz (CL=3), interface LVTTL.Samsung-ElectronicTSOP (II)540°C70°C131 K
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