| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| EIA1616-8P | 16.2-16.4GHz, 8W internally matched power FET | distributor | - | 2 | - | - | 22 K |
| ICL7616ACPA | Single operational amplifier, 2mV | Maxim-Integrated-Producs | Plastic DIP | 8 | 0°C | 70°C | 511 K |
| ICL7616ACSA | Single operational amplifier, 2mV | Maxim-Integrated-Producs | Slim SO | 8 | 0°C | 70°C | 511 K |
| ICL7616ACTV | Single operational amplifier, 2mV | Maxim-Integrated-Producs | - | 8 | 0°C | 70°C | 511 K |
| ICL7616AMTV | Single operational amplifier, 2mV | Maxim-Integrated-Producs | - | 8 | -55°C | 125°C | 511 K |
| ICL7616BCPA | Single operational amplifier,5mV | Maxim-Integrated-Producs | Plastic DIP | 8 | 0°C | 70°C | 511 K |
| ICL7616BCSA | Single operational amplifier,5mV | Maxim-Integrated-Producs | Slim SO | 8 | 0°C | 70°C | 511 K |
| K4H561638B-TCA0 | 256 Mb DDR SDRAM. Version 0.3, 100 MHz, speed 10ns@CL2. | Samsung-Electronic | - | 66 | 0°C | 70°C | 658 K |
| K4H561638B-TLA0 | 256 Mb DDR SDRAM. Version 0.3, 100 MHz, speed 10ns@CL2. | Samsung-Electronic | - | 66 | 0°C | 70°C | 658 K |
| K4H561638B-TLB0 | 256 Mb DDR SDRAM. Version 0.3, 133 MHz, speed 7.5ns@CL2.5. | Samsung-Electronic | - | 66 | 0°C | 70°C | 658 K |
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