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| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|---|---|---|---|---|---|---|
| 1N6160A | Transient Voltage Suppressor | Microsemi-Corporation | G | - | - | - | 104 K |
| 1N6160AUS | Transient Voltage Suppressor | Microsemi-Corporation | - | - | - | - | 104 K |
| HYB3166160AT-40 | 4M x 16bit DRAM | Infineon-formely-Siemens | - | 50 | 0°C | 70°C | 216 K |
| HYB3166160AT-50 | 4M x 16bit DRAM | Infineon-formely-Siemens | - | 50 | 0°C | 70°C | 216 K |
| HYB3166160AT-60 | 4M x 16bit DRAM | Infineon-formely-Siemens | - | 50 | 0°C | 70°C | 216 K |
| HYB3166160ATL-50 | 4M x 16bit DRAM | Infineon-formely-Siemens | - | 50 | 0°C | 70°C | 216 K |
| HYB3166160ATL-60 | 4M x 16bit DRAM | Infineon-formely-Siemens | - | 50 | 0°C | 70°C | 216 K |
| HYB39S256160T-10 | 256Mbit Synchronous DRAM | Infineon-formely-Siemens | - | 54 | 0°C | 70°C | 425 K |
| HYB39S256160T-8 | 256Mbit Synchronous DRAM | Infineon-formely-Siemens | - | 54 | 0°C | 70°C | 425 K |
| HYB39S256160T-8B | 256Mbit Synchronous DRAM | Infineon-formely-Siemens | - | 54 | 0°C | 70°C | 425 K |
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