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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
A61L6316S-1010ns; operating current:230mA; standby current: 12mA 64K x 16bit high speed CMOS SRAMdistributorSOJ420°C70°C223 K
A61L6316S-1212ns; operating current:230mA; standby current: 12mA 64K x 16bit high speed CMOS SRAMdistributorSOJ420°C70°C223 K
A61L6316S-1515ns; operating current:230mA; standby current: 12mA 64K x 16bit high speed CMOS SRAMdistributorSOJ420°C70°C223 K
A61L6316V-1212ns; operating current:230mA; standby current: 12mA 64K x 16bit high speed CMOS SRAMdistributorTSOP440°C70°C223 K
A61L6316V-1515ns; operating current:230mA; standby current: 12mA 64K x 16bit high speed CMOS SRAMdistributorTSOP440°C70°C223 K
RB161L-40Schottky barrier diode, 20V, 1AROHM-2-40°C125°C28 K
UT61L6416MC-10Access time: 10 ns, 64 K x 16 Bit high speed CMOS SRAMdistributorTSOP440°C70°C159 K
UT61L6416MC-12Access time: 12 ns, 64 K x 16 Bit high speed CMOS SRAMdistributorTSOP440°C70°C159 K
UT61L6416MC-15Access time: 15 ns, 64 K x 16 Bit high speed CMOS SRAMdistributorTSOP440°C70°C159 K
UT61L6416MC-8Access time: 8 ns, 64 K x 16 Bit high speed CMOS SRAMdistributorTSOP440°C70°C159 K
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