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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
HY57V651620BLTC-55Synchronous DRAM organized 4 Banks x 1M x 16Bit, LVTT Linterface, 3.3V, 183MHz, low powerdistributorTSOP II540°C70°C81 K
HY57V651620BLTC-6Synchronous DRAM organized 4 Banks x 1M x 16Bit, LVTT Linterface, 3.3V, 166MHz, low powerdistributorTSOP II540°C70°C81 K
HY57V651620BLTC-7Synchronous DRAM organized 4 Banks x 1M x 16Bit, LVTT Linterface, 3.3V, 143MHz, low powerdistributorTSOP II540°C70°C81 K
HY57V651620BTC-10Synchronous DRAM organized 4 Banks x 1M x 16Bit, LVTT Linterface, 3.3V, 100MHzdistributorTSOP II540°C70°C81 K
HY57V651620BTC-10PSynchronous DRAM organized 4 Banks x 1M x 16Bit, LVTT Linterface, 3.3V, 100MHzdistributorTSOP II540°C70°C81 K
HY57V651620BTC-10SSynchronous DRAM organized 4 Banks x 1M x 16Bit, LVTT Linterface, 3.3V, 100MHzdistributorTSOP II540°C70°C81 K
HY57V651620BTC-6Synchronous DRAM organized 4 Banks x 1M x 16Bit, LVTT Linterface, 3.3V, 166MHzdistributorTSOP II540°C70°C81 K
HY57V651620BTC-7Synchronous DRAM organized 4 Banks x 1M x 16Bit, LVTT Linterface, 3.3V, 143MHzdistributorTSOP II540°C70°C81 K
HY57V651620BTC-75Synchronous DRAM organized 4 Banks x 1M x 16Bit, LVTT Linterface, 3.3V, 133MHzdistributorTSOP II540°C70°C81 K
HY57V651620BTC-8Synchronous DRAM organized 4 Banks x 1M x 16Bit, LVTT Linterface, 3.3V, 125MHzdistributorTSOP II540°C70°C81 K
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