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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
5962H9322603QXAMonolithic transceiver, 5V operation: SMD. Device type idle low. Class Q. Lead finish solder. Total dose 1E6 rads(Si).distributorDIP36-55°C125°C362 K
5962H9322603QXCMonolithic transceiver, 5V operation: SMD. Device type idle low. Class Q. Lead finish gold. Total dose 1E6 rads(Si).distributorDIP36-55°C125°C362 K
5962H9322603QXXMonolithic transceiver, 5V operation: SMD. Device type idle low. Class Q. Lead finish optional. Total dose 1E6 rads(Si).distributorDIP36-55°C125°C362 K
5962H9322603QZAMonolithic transceiver, 5V operation: SMD. Device type idle low. Class Q. Lead finish solder. Total dose 1E6 rads(Si).distributorFlatPack24-55°C125°C362 K
5962H9689103VYCRadiation-hardenet 32K x 8 PROM: SMD. Class V. 45ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish gold. Total dose 1E6 rads(Si).distributorDIP28-55°C125°C69 K
5962H9689103VYCRadiation-hardenet 32K x 8 PROM: SMD. Class V. 45ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish gold. Total dose 1E6 rads(Si).distributorDIP28-55°C125°C69 K
5962H9689103VYCRadiation-hardenet 32K x 8 PROM: SMD. Class V. 45ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish gold. Total dose 1E6 rads(Si).distributorDIP28-55°C125°C69 K
5962H9689104QYARadiation-hardenet 32K x 8 PROM: SMD. Class Q. 40ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish solder. Total dose 1E6 rads(Si).distributorDIP28-55°C125°C69 K
5962H9689104QYXRadiation-hardenet 32K x 8 PROM: SMD. Class Q. 40ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish optional. Total dose 1E6 rads(Si).distributorDIP28-55°C125°C69 K
5962H9689104VYCRadiation-hardenet 32K x 8 PROM: SMD. Class V. 40ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish gold. Total dose 1E6 rads(Si).distributorDIP28-55°C125°C69 K
5962H9689104VYXRadiation-hardenet 32K x 8 PROM: SMD. Class V. 40ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish optional. Total dose 1E6 rads(Si).distributorDIP28-55°C125°C69 K
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