Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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IXSN62N60U1 | 600V IGBT with diode | distributor | - | 4 | -55°C | 150°C | 68 K |
ZRT062N8C2 | 6.2 V low power precision reference sourse | Zetex-Semiconductor | SO | 8 | 0°C | 70°C | 166 K |
ZRT062N8C2 | 6.2 V low power precision reference sourse | Zetex-Semiconductor | SO | 8 | 0°C | 70°C | 166 K |
ZXM62N02E6TA | 20 V N-channel enhancement mode mosfet | Zetex-Semiconductor | SOT | 6 | -55°C | 150°C | 186 K |
ZXM62N02E6TA | 20 V N-channel enhancement mode mosfet | Zetex-Semiconductor | SOT | 6 | -55°C | 150°C | 186 K |
ZXM62N02E6TC | 20 V N-channel enhancement mode mosfet | Zetex-Semiconductor | SOT | 6 | -55°C | 150°C | 186 K |
ZXM62N02E6TC | 20 V N-channel enhancement mode mosfet | Zetex-Semiconductor | SOT | 6 | -55°C | 150°C | 186 K |
ZXM62N03E6TA | 30 V N-channel enhancement mode mosfet | Zetex-Semiconductor | SOT | 6 | -55°C | 150°C | 187 K |
ZXM62N03E6TA | 30 V N-channel enhancement mode mosfet | Zetex-Semiconductor | SOT | 6 | -55°C | 150°C | 187 K |
ZXM62N03E6TC | 30 V N-channel enhancement mode mosfet | Zetex-Semiconductor | SOT | 6 | -55°C | 150°C | 187 K |
[1] 2 [3] [4] |
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