| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 89C1632RPQK20 | 16 Mbit (512K x 32-bit) MCM SRAM | distributor | QFP | 16 | -55°C | 125°C | 356 K |
| ADS6632A4A-5 | 200 Mhz LVTTL synchronous DRAM, 512K x 32 bit x 4 banks | distributor | TSOP | 86 | 0°C | 70°C | 648 K |
| ADS6632A4A-5.5 | 183 Mhz LVTTL synchronous DRAM, 512K x 32 bit x 4 banks | distributor | TSOP | 86 | 0°C | 70°C | 648 K |
| ADS6632A4A-6 | 166 Mhz LVTTL synchronous DRAM, 512K x 32 bit x 4 banks | distributor | TSOP | 86 | 0°C | 70°C | 648 K |
| GPV-6322 | Triggered vacuum gap. Static breakdown voltage 65 kV. | distributor | - | - | -54°C | 100°C | 59 K |
| REC10-6324SRWL | 10W DC/DC converter with 63V input, 24/416mA output | distributor | DIL | 6 | -25°C | 70°C | 82 K |
| REC10-6324SRWLZ | 10W DC/DC converter with 63V input, 24/416mA output | distributor | DIL | 6 | -25°C | 70°C | 82 K |
| VDS6632A4A-5 | 200 Mhz LVTTL synchronous DRAM, 512 K x 32 bit x 4 banks | distributor | TSOP | 86 | 0°C | 70°C | 648 K |
| VDS6632A4A-5.5 | 183 Mhz LVTTL synchronous DRAM, 512 K x 32 bit x 4 banks | distributor | TSOP | 86 | 0°C | 70°C | 648 K |
| VDS6632A4A-6 | 166 Mhz LVTTL synchronous DRAM, 512 K x 32 bit x 4 banks | distributor | TSOP | 86 | 0°C | 70°C | 648 K |
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