Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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IS61LPS25632D-133B | 256K x 32 synchronous pipeline, single-cycle deselect static RAM | distributor | PBGA | 119 | 0°C | 70°C | 146 K |
IS61LPS25632D-150B | 256K x 32 synchronous pipeline, single-cycle deselect static RAM | distributor | PBGA | 119 | 0°C | 70°C | 146 K |
IS61LPS25632T-133TQII | 256K x 32 synchronous pipeline, single-cycle deselect static RAM | distributor | TQFP | 100 | -40°C | 85°C | 146 K |
IS61SPS25632D-133B | 256K x 32 synchronous pipeline, single-cycle deselect static RAM | distributor | PBGA | 119 | 0°C | 70°C | 146 K |
IS61SPS25632D-150B | 256K x 32 synchronous pipeline, single-cycle deselect static RAM | distributor | PBGA | 119 | 0°C | 70°C | 146 K |
IS61SPS25632D-150TQII | 256K x 32 synchronous pipeline, single-cycle deselect static RAM | distributor | TQFP | 100 | -40°C | 85°C | 146 K |
IS61SPS25632T-150TQII | 256K x 32 synchronous pipeline, single-cycle deselect static RAM | distributor | TQFP | 100 | -40°C | 85°C | 146 K |
K4S281632M-TC/L10 | 2M x 16bit x 4 banks synchronous DRAM LVTTL. 128 Mbit SDRAM. Max freq. 66 MHz (CL=2&3) | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 87 K |
K4S281632M-TC/L1H | 2M x 16bit x 4 banks synchronous DRAM LVTTL. 128 Mbit SDRAM. Max freq. 100 MHz (CL=2) | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 87 K |
K4S281632M-TC/L80 | 2M x 16bit x 4 banks synchronous DRAM LVTTL. 128 Mbit SDRAM. Max freq. 125 MHz (CL=3) | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 87 K |
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