| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| K4S641632D-TC/L1H | 1M x 16bit x 4 banks synchronous DRAM LVTTL. 64 Mbit SDRAM. Max freq. 100 MHz (CL=2), interface LVTTL. | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 115 K |
| K4S641632D-TC/L1L | 1M x 16bit x 4 banks synchronous DRAM LVTTL. 64 Mbit SDRAM. Max freq. 100 MHz (CL=3), interface LVTTL. | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 115 K |
| K4S641632D-TC/L55 | 1M x 16bit x 4 banks synchronous DRAM LVTTL. 64 Mbit SDRAM. Max freq. 183 MHz (CL=3), interface LVTTL. | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 115 K |
| K4S641632D-TC/L60 | 1M x 16bit x 4 banks synchronous DRAM LVTTL. 64 Mbit SDRAM. Max freq. 166 MHz (CL=3), interface LVTTL. | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 115 K |
| K4S641632D-TC/L70 | 1M x 16bit x 4 banks synchronous DRAM LVTTL. 64 Mbit SDRAM. Max freq. 143 MHz (CL=3), interface LVTTL. | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 115 K |
| K4S641632D-TC/L75 | 1M x 16bit x 4 banks synchronous DRAM LVTTL. 64 Mbit SDRAM. Max freq. 133 MHz (CL=3), interface LVTTL. | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 115 K |
| K4S641632D-TC/L80 | 1M x 16bit x 4 banks synchronous DRAM LVTTL. 64 Mbit SDRAM. Max freq. 125 MHz (CL=3), interface LVTTL. | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 115 K |
| MAX6325CPA | Low-noise, +2.5V voltage reference. Max tempco 1ppm/c | Maxim-Integrated-Producs | Plastic DIP | 8 | 0°C | 70°C | 186 K |
| MAX6325CSA | Liw-noise, +2.5V voltage reference. Max tempco 1ppm/C | Maxim-Integrated-Producs | SO | 8 | 0°C | 70°C | 186 K |
| MAX6325EPA | Low-noise, +2.5V voltage reference. Max tempco 1.5ppm/C | Maxim-Integrated-Producs | Plastic DIP | 8 | -40°C | 85°C | 186 K |
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