| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IDT70T633S008BC | High-speed 2.5V 512 x 18 asynchronous dual-port static RAM, 8ns | Integrated-Device-Technology-Inc- | BGA | 256 | 0°C | 70°C | 342 K |
| IDT70T633S010BC | High-speed 2.5V 512 x 18 asynchronous dual-port static RAM, 10ns | Integrated-Device-Technology-Inc- | BGA | 256 | 0°C | 70°C | 342 K |
| IDT70T633S010BCI | High-speed 2.5V 512 x 18 asynchronous dual-port static RAM, 10ns | Integrated-Device-Technology-Inc- | BGA | 256 | -40°C | 85°C | 342 K |
| IDT70T633S010BFI | High-speed 2.5V 512 x 18 asynchronous dual-port static RAM, 10ns | Integrated-Device-Technology-Inc- | fpBGA | 208 | -40°C | 85°C | 342 K |
| IDT70T633S012BC | High-speed 2.5V 512 x 18 asynchronous dual-port static RAM, 12ns | Integrated-Device-Technology-Inc- | BGA | 256 | 0°C | 70°C | 342 K |
| IDT70T633S012BCI | High-speed 2.5V 512 x 18 asynchronous dual-port static RAM, 12ns | Integrated-Device-Technology-Inc- | BGA | 256 | -40°C | 85°C | 342 K |
| IDT70T633S012BF | High-speed 2.5V 512 x 18 asynchronous dual-port static RAM, 12ns | Integrated-Device-Technology-Inc- | fpBGA | 208 | 0°C | 70°C | 342 K |
| IDT70T633S012BFI | High-speed 2.5V 512 x 18 asynchronous dual-port static RAM, 12ns | Integrated-Device-Technology-Inc- | fpBGA | 208 | -40°C | 85°C | 342 K |
| IDT70T633S015BC | High-speed 2.5V 512 x 18 asynchronous dual-port static RAM, 15ns | Integrated-Device-Technology-Inc- | BGA | 256 | 0°C | 70°C | 342 K |
| IDT70T633S015BF | High-speed 2.5V 512 x 18 asynchronous dual-port static RAM, 15ns | Integrated-Device-Technology-Inc- | fpBGA | 208 | 0°C | 70°C | 342 K |
| << [83] [84] [85] [86] [87] 88 [89] |
|---|
