| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| EM636327Q-55 | 183MHz 512 x 32 high speed synchronous graphic DRAM (SGRAM) | distributor | QFP | 100 | 0°C | 70°C | 1 M |
| EM636327TQ-55 | 183MHz 512 x 32 high speed synchronous graphic DRAM (SGRAM) | distributor | TQFP | 100 | 0°C | 70°C | 1 M |
| EM636327TQ-6 | 166MHz 512 x 32 high speed synchronous graphic DRAM (SGRAM) | distributor | TQFP | 100 | 0°C | 70°C | 1 M |
| L6363 | PRML READ/WRITE CHANNEL | SGS-Thomson-Microelectronics | - | - | - | - | 86 K |
| NTE6363 | Silicon power rectifier diode, 300 Amp. Anode to case. Max repetitive peak reverse voltage 1400V. | distributor | - | 2 | -40°C | 180°C | 25 K |
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