| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| EM564081BA-85 | 70ns 512K x 8 low power SRAM | distributor | BGA | 36 | 0°C | 70°C | 287 K |
| EM564081BA-85E | 70ns 512K x 8 low power SRAM | distributor | BGA | 36 | 0°C | 70°C | 287 K |
| EM564081BC-85 | 70ns 512K x 8 low power SRAM | distributor | BGA | 36 | 0°C | 70°C | 287 K |
| EM564081BC-85E | 70ns 512K x 8 low power SRAM | distributor | BGA | 36 | 0°C | 70°C | 287 K |
| K4F640811B-JC-45 | 8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 45ns | Samsung-Electronic | SOJ | 32 | 0°C | 70°C | 367 K |
| K4F640811B-JC-50 | 8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 50ns | Samsung-Electronic | SOJ | 32 | 0°C | 70°C | 367 K |
| K4F640811B-TC-45 | 8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 45ns | Samsung-Electronic | TSOP II | 32 | 0°C | 70°C | 367 K |
| K4F640811B-TC-50 | 8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 50ns | Samsung-Electronic | TSOP II | 32 | 0°C | 70°C | 367 K |
| K4F640811B-TC-60 | 8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 60ns | Samsung-Electronic | TSOP II | 32 | 0°C | 70°C | 367 K |
| NTE6408 | Bilateral trigger diode (DIAC). Breakover voltage (forward and reverse) 32V (typ). | distributor | DO35 | 2 | -40°C | 125°C | 18 K |
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