| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| K4F640812D-JC/L | 8M x 8bit CMOS dynamic RAM with fast page mode. 3.3V, 4K refresh cycle. | Samsung-Electronic | SOJ | 32 | 0°C | 70°C | 368 K |
| K4F640812D-TC/L | 8M x 8bit CMOS dynamic RAM with fast page mode. 3.3V, 4K refresh cycle. | Samsung-Electronic | TSOP (II) | 32 | 0°C | 70°C | 368 K |
| K4S640832D-TC/L10 | 12M x 8bit x 4 banks synchronous DRAM LVTTL. 64 Mbit SDRAM. Max freq. 66 MHz (CL=2&3), interface LVTTL. | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 128 K |
| MT5C6408C-12L/IT | 8K x 8 SRAM memory array | distributor | DIP | 28 | -40°C | 85°C | 100 K |
| MT5C6408C-15L/IT | 8K x 8 SRAM memory array | distributor | DIP | 28 | -40°C | 85°C | 100 K |
| MT5C6408C-20L/IT | 8K x 8 SRAM memory array | distributor | DIP | 28 | -40°C | 85°C | 100 K |
| MT5C6408C-25L/IT | 8K x 8 SRAM memory array | distributor | DIP | 28 | -40°C | 85°C | 100 K |
| MT5C6408C-35L/IT | 8K x 8 SRAM memory array | distributor | DIP | 28 | -40°C | 85°C | 100 K |
| MT5C6408C-45L/IT | 8K x 8 SRAM memory array | distributor | DIP | 28 | -40°C | 85°C | 100 K |
| MT5C6408C-55L/IT | 8K x 8 SRAM memory array | distributor | DIP | 28 | -40°C | 85°C | 100 K |
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