Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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IN74ACT640N | Octal 3-state inverting bus transceiver high-speed silicon-gate CMOS | distributor | Plastic DIP | 20 | -40°C | 85°C | 196 K |
IN74ACT640N | Octal 3-state inverting bus transceiver high-speed silicon-gate CMOS | distributor | Plastic DIP | 20 | -40°C | 85°C | 196 K |
IRF640NL | N-channel power MOSFET for fast switching applications, 200V, 18A | International-Rectifier | - | 3 | -55°C | 175°C | 155 K |
IRF640NL | N-channel power MOSFET for fast switching applications, 200V, 18A | International-Rectifier | - | 3 | -55°C | 175°C | 155 K |
IRF640NSTR | N-channel power MOSFET for fast switching applications, 200V, 18A | International-Rectifier | D2PAK | 3 | -55°C | 175°C | 155 K |
SL74HC640N | Octal 3-state inverting bus transceiver. High-performance silicon-gate CMOS. | distributor | DIP | 20 | -55°C | 125°C | 50 K |
TN2640N3 | 400V N-channel enhancement-mode vertical DMOS FET | distributor | - | 3 | -55°C | 150°C | 461 K |
TN2640ND | 400V N-channel enhancement-mode vertical DMOS FET | distributor | Die | 3 | -55°C | 150°C | 461 K |
TP2640N3 | 400V P-channel enhancement-mode vertical DMOS FET | distributor | - | 3 | -55°C | 150°C | 457 K |
TP2640ND | 400V P-channel enhancement-mode vertical DMOS FET | distributor | Die | 3 | -55°C | 150°C | 457 K |
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