| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IS62U6416LL-20B | 64K x 16 low voltage, ultra-low power CMOS static RAM | distributor | BGA | 48 | 0°C | 70°C | 78 K |
| IS62U6416LL-20BI | 64K x 16 low voltage, ultra-low power CMOS static RAM | distributor | BGA | 48 | -40°C | 85°C | 78 K |
| IS62U6416LL-20K | 64K x 16 low voltage, ultra-low power CMOS static RAM | distributor | SOJ | 44 | 0°C | 70°C | 78 K |
| IS62U6416LL-20T | 64K x 16 low voltage, ultra-low power CMOS static RAM | distributor | TSOP | 44 | 0°C | 70°C | 78 K |
| IS62U6416LL-20TI | 64K x 16 low voltage, ultra-low power CMOS static RAM | distributor | TSOP | 44 | -40°C | 85°C | 78 K |
| K4S641632D-TC/L55 | 1M x 16bit x 4 banks synchronous DRAM LVTTL. 64 Mbit SDRAM. Max freq. 183 MHz (CL=3), interface LVTTL. | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 115 K |
| K4S641632D-TC/L60 | 1M x 16bit x 4 banks synchronous DRAM LVTTL. 64 Mbit SDRAM. Max freq. 166 MHz (CL=3), interface LVTTL. | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 115 K |
| K4S641632D-TC/L70 | 1M x 16bit x 4 banks synchronous DRAM LVTTL. 64 Mbit SDRAM. Max freq. 143 MHz (CL=3), interface LVTTL. | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 115 K |
| K4S641632D-TC/L75 | 1M x 16bit x 4 banks synchronous DRAM LVTTL. 64 Mbit SDRAM. Max freq. 133 MHz (CL=3), interface LVTTL. | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 115 K |
| K4S641632D-TC/L80 | 1M x 16bit x 4 banks synchronous DRAM LVTTL. 64 Mbit SDRAM. Max freq. 125 MHz (CL=3), interface LVTTL. | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 115 K |
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