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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
K4F641612C-TC454M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45nsSamsung-ElectronicTSOP II500°C70°C844 K
K4F641612C-TC504M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50nsSamsung-ElectronicTSOP II500°C70°C844 K
K4F641612C-TC604M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60nsSamsung-ElectronicTSOP II500°C70°C844 K
K4F641612C-TL454M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low powerSamsung-ElectronicTSOP II500°C70°C844 K
K4F641612C-TL504M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low powerSamsung-ElectronicTSOP II500°C70°C844 K
K4S641632H-TC6064Mb synchronous DRAM, 3.3V, LVTTL interface, 166MHzSamsung-ElectronicTSOP II540°C70°C144 K
K4S641632H-TL7564Mb synchronous DRAM, 3.3V, LVTTL interface, 133MHzSamsung-ElectronicTSOP II540°C70°C144 K
PP0641SA58V; 60Amp; unidirectional thyristor surge suppressor. For SLIC line card, DBX branch exchange switches, FCC part 68 customer premise equipment, line interface modem, ISDN architecture interfacedistributor-2-55°C150°C375 K
TC58FVB641FT-1064-Mbit CMOS flash memory, 100nsToshibaTSOP48-40°C85°C593 K
TC58FVB641XB-1064-Mbit CMOS flash memory, 100nsToshibaTFBGA63-40°C85°C593 K
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