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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
K4S641632F-TC50CMOS SDRAM 4 x 1,048,576 words by 16 bits, max freq. 200MHz, LVTTL interfaceSamsung-ElectronicTSOP II540°C70°C133 K
K4S641632F-TC60CMOS SDRAM 4 x 1,048,576 words by 16 bits, max freq. 166MHz, LVTTL interfaceSamsung-ElectronicTSOP II540°C70°C133 K
K4S641632F-TC60CMOS SDRAM 4 x 1,048,576 words by 16 bits, max freq. 166MHz, LVTTL interfaceSamsung-ElectronicTSOP II540°C70°C133 K
K4S641632F-TL1LCMOS SDRAM 4 x 1,048,576 words by 16 bits, max freq. 100MHz, LVTTL interfaceSamsung-ElectronicTSOP II540°C70°C133 K
K4S641632F-TL1LCMOS SDRAM 4 x 1,048,576 words by 16 bits, max freq. 100MHz, LVTTL interfaceSamsung-ElectronicTSOP II540°C70°C133 K
K4S641632F-TL50CMOS SDRAM 4 x 1,048,576 words by 16 bits, max freq. 200MHz, LVTTL interfaceSamsung-ElectronicTSOP II540°C70°C133 K
K4S641632F-TL55CMOS SDRAM 4 x 1,048,576 words by 16 bits, max freq. 183MHz, LVTTL interfaceSamsung-ElectronicTSOP II540°C70°C133 K
V436416S04VCTG-10PC3.3V 16M x 64 high performance PC100 unbuffered SDRAM moduleMosel-VitelicTSOP1680°C70°C65 K
V436416S04VCTG-753.3V 16M x 64 high performance PC100 unbuffered SDRAM moduleMosel-VitelicTSOP1680°C70°C278 K
V436416S04VTG-10PC3.3V 16M x 64 high performance PC100 unbuffered SDRAM moduleMosel-VitelicTSOP1680°C70°C65 K
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