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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
FU-645PDF-V1M1BUncooled DFB-LD moduleMitsubishi-Electric-Corporation-Semiconductor-Group-8-5°C70°C109 K
FU-645PDF-V1M2CUncooled DFB-LD moduleMitsubishi-Electric-Corporation-Semiconductor-Group-8-5°C70°C109 K
FU-645PDF-W1M1BUncooled DFB-LD moduleMitsubishi-Electric-Corporation-Semiconductor-Group-8-5°C70°C109 K
FU-645SDF-1M1BUncooled DFB-LD moduleMitsubishi-Electric-Corporation-Semiconductor-Group-8-5°C70°C109 K
FU-645SDF-1M2CUncooled DFB-LD moduleMitsubishi-Electric-Corporation-Semiconductor-Group-8-5°C70°C109 K
MAX7645AEJPTTL/CMOS compatible for Vdd = 15V, 12-bit buffered multiplying DAC. Gain error +-1 LSB.Maxim-Integrated-ProducsCERDIP20-40°C85°C516 K
MAX7645AMJPTTL/CMOS compatible for Vdd = 15V, 12-bit buffered multiplying DAC. Gain error +-1 LSB.Maxim-Integrated-ProducsCERDIP20-55°C125°C516 K
MAX7645BEJPTTL/CMOS compatible for Vdd = 15V, 12-bit buffered multiplying DAC. Gain error +-3 LSB.Maxim-Integrated-ProducsCERDIP20-40°C85°C516 K
MAX7645BMJPTTL/CMOS compatible for Vdd = 15V, 12-bit buffered multiplying DAC. Gain error +-3 LSB.Maxim-Integrated-ProducsCERDIP20-55°C125°C516 K
MH16V645BWJ-51,073,741,824-bit (16,777,216-word by 64-bit) synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-Group--0°C70°C127 K
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