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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
AD645AH18V; 500-750mW; low noise, low drift FET operational amplifier. For low noise photodiode preamps, CT scanners, precision I-V convertersAnalog-Devices-8-40°C85°C445 K
AD645BH18V; 500-750mW; low noise, low drift FET operational amplifier. For low noise photodiode preamps, CT scanners, precision I-V convertersAnalog-Devices-8-40°C85°C445 K
AD645CH18V; 500-750mW; low noise, low drift FET operational amplifier. For low noise photodiode preamps, CT scanners, precision I-V convertersAnalog-Devices-8-40°C85°C445 K
AD645CH18V; 500-750mW; low noise, low drift FET operational amplifier. For low noise photodiode preamps, CT scanners, precision I-V convertersAnalog-Devices-8-40°C85°C445 K
AD645JN18V; 500-750mW; low noise, low drift FET operational amplifier. For low noise photodiode preamps, CT scanners, precision I-V convertersAnalog-DevicesDIP80°C70°C445 K
AD645KN18V; 500-750mW; low noise, low drift FET operational amplifier. For low noise photodiode preamps, CT scanners, precision I-V convertersAnalog-DevicesDIP80°C70°C445 K
AD645SH/883B18V; 500-750mW; low noise, low drift FET operational amplifier. For low noise photodiode preamps, CT scanners, precision I-V convertersAnalog-Devices-8-40°C85°C445 K
MV6454ADIFFUSED T-1 3/4 SOLID STATE LAMPSFairchild-Semiconductor----282 K
PBYR1645FRectifier diode. Schottky barrier.Philips-SemiconductorsSOD10020°C150°C48 K
PBYR645CTDRectifier diode. Schottky barrier.Philips-SemiconductorsSOT42830°C150°C45 K
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