| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 28LV64PC-3 | Speed: 200 ns, Low voltage CMOS 64 K electrically erasable programmable ROM 8K x 8 BIT EEPROM | distributor | PDIP | 28 | 0°C | 70°C | 42 K |
| 28LV64PC-3 | Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns. | distributor | PDIP | 28 | 0°C | 70°C | 42 K |
| 28LV64PC-4 | Speed: 250 ns, Low voltage CMOS 64 K electrically erasable programmable ROM 8K x 8 BIT EEPROM | distributor | PDIP | 28 | 0°C | 70°C | 42 K |
| 28LV64PC-4 | Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns. | distributor | PDIP | 28 | 0°C | 70°C | 42 K |
| 28LV64PC-5 | Speed: 300 ns, Low voltage CMOS 64 K electrically erasable programmable ROM 8K x 8 BIT EEPROM | distributor | PDIP | 28 | 0°C | 70°C | 42 K |
| 28LV64PC-5 | Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 300 ns. | distributor | PDIP | 28 | 0°C | 70°C | 42 K |
| 28LV64PC-6 | Speed: 400 ns, Low voltage CMOS 64 K electrically erasable programmable ROM 8K x 8 BIT EEPROM | distributor | PDIP | 28 | 0°C | 70°C | 42 K |
| 28LV64PC-6 | Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 400 ns. | distributor | PDIP | 28 | 0°C | 70°C | 42 K |
| EPC1064PC8 | Configuration devices for SRAM-based LUT devices, 65,536 ? 1-bit device with 5.0-V operation | distributor | PDIP | 8 | 0°C | 85°C | 539 K |
| UT54ACS164PCX | RadHard MSI. 8-bit shift register. CMOS compatible I/O level. Lead finish optional. | distributor | Ceramic DIP | 14 | -55°C | 125°C | 15 K |
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