Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
---|
2N6517 | High voltage transistor. Collector-emitter voltage: Vceo = 350V. Collector-base voltage: Vcbo = 350V. Collector dissipation: Pc(max) = 625mW. | distributor | - | 3 | 0°C | 150°C | 47 K |
H2N6517 | 500mA NPN epitaxial planar transistor for general purpose applications requiring high breakdown voltages | distributor | - | 3 | - | - | 41 K |
HMBT6517 | Emitter to base voltage:5V; 250mA NPN epitaxial planar transistor for general purpose applications | distributor | - | 3 | - | - | 31 K |
LA6517 | 2-output power operational amplifier | SANYO-Electric-Co--Ltd- | DIP | 8 | -20°C | 75°C | 120 K |
LA6517 | 2-output power operational amplifier | SANYO-Electric-Co--Ltd- | DIP | 8 | -20°C | 75°C | 120 K |
LA6517M | 2-output power operational amplifier | SANYO-Electric-Co--Ltd- | MFP16FS | 16 | -20°C | 75°C | 120 K |
MMBT6517LT1 | 350 V, high voltage transistor | distributor | - | 3 | -55°C | 150°C | 169 K |
MPS6517 | 4V, 350mW PNP silicon planar epitaxial transistor | distributor | - | 3 | -55°C | 150°C | 173 K |
SN65176B | Differential BUS transceiver | Texas-Instruments | P | 8 | -40°C | 105°C | 171 K |
SN65176B | Differential BUS transceiver | Texas-Instruments | P | 8 | -40°C | 105°C | 171 K |
[1] [2] 3 [4] [5] [6] [7] |
---|