| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2N6520 | High voltage transistor. Collector-emitter voltage: Vceo = -350V. Collector-base voltage: Vcbo = -350V. Collector dissipation: Pc(max) = 0.625W. | distributor | - | 3 | 0°C | 150°C | 109 K |
| H2N6520 | 500mA PNP epitaxial planar transistor for general purpose applications requiring high breakdown voltages | distributor | - | 3 | - | - | 36 K |
| HMBT6520 | Emitter to base voltage:5V; 250mA PNP epitaxial planar transistor for general purpose applications | distributor | - | 3 | - | - | 29 K |
| MMBT6520LT1 | 350 V, high voltage transistor | distributor | - | 3 | -55°C | 150°C | 167 K |
| SC91652A | 6.0V 13 memory tone/pulse dialer with redial save handfree & hold function | distributor | DIP | 18 | -25°C | 70°C | 431 K |
| SL74HC652D | Octal 3-state bus transceiver and D flip-flop. High-performance silicon-gate CMOS. | distributor | SOIC | 24 | -55°C | 125°C | 79 K |
| SL74HC652N | Octal 3-state bus transceiver and D flip-flop. High-performance silicon-gate CMOS. | distributor | DIP | 24 | -55°C | 125°C | 79 K |
| TC7652CPD | Low noise, chopper-stabilized operational amplifier. Max Vos = +-5microV | TelCom-Semiconductor-Inc- | Plastic DIP | 14 | 0°C | 70°C | 90 K |
| USP6520 | Amplifier transistor. Vcbo = 40V, Vceo = 25V, Vebo = 4V, Ic = 100mA, Pc = 625mW | distributor | - | 3 | 0°C | 150°C | 41 K |
| USP6521 | Amplifier transistor. Vcbo = 40V, Vceo = 25V, Vebo = 4V, Ic = 100mA, Pc = 625mW | distributor | - | 3 | 0°C | 150°C | 40 K |
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