| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2082-6524-03 | 5 Watt, DC-18 GHz, Fixed coaxial attenuator | M-A-COM---manufacturer-of-RF | - | - | -55°C | 125°C | 226 K |
| 2082-6524-06 | 5 Watt, DC-18 GHz, Fixed coaxial attenuator | M-A-COM---manufacturer-of-RF | - | - | -55°C | 125°C | 226 K |
| 2082-6524-10 | 5 Watt, DC-18 GHz, Fixed coaxial attenuator | M-A-COM---manufacturer-of-RF | - | - | -55°C | 125°C | 226 K |
| 2082-6524-20 | 5 Watt, DC-18 GHz, Fixed coaxial attenuator | M-A-COM---manufacturer-of-RF | - | - | -55°C | 125°C | 226 K |
| 2N6520 | PNP silicon planar medium power transistor | Zetex-Semiconductor | - | 3 | -55°C | 200°C | 27 K |
| 2N6520 | PNP silicon planar medium power transistor | Zetex-Semiconductor | - | 3 | -55°C | 200°C | 27 K |
| MA44652A | 50 V, 15 ns, snap varactor step recovery diode | M-A-COM---manufacturer-of-RF | - | - | -65°C | 200°C | 77 K |
| MA44652B | 50 V, 15 ns, snap varactor step recovery diode | M-A-COM---manufacturer-of-RF | - | - | -65°C | 200°C | 77 K |
| MA44652C | 50 V, 15 ns, snap varactor step recovery diode | M-A-COM---manufacturer-of-RF | - | - | -65°C | 200°C | 77 K |
| OM6526SA | 1000V N-channel IGBT with a soft recovery diode | distributor | - | 3 | -55°C | 150°C | 22 K |
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