| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2N6569 | NPN silicon power transistor | distributor | - | 2 | -65°C | 200°C | 144 K |
| KA2656D | Linear integrated circuit. Input level PMOS | Samsung-Electronic | SOP | 16 | -20°C | 85°C | 147 K |
| KA2656N | Linear integrated circuit. Input level PMOS | Samsung-Electronic | DIP | 16 | -20°C | 85°C | 147 K |
| M65617SP | Picture-in-picture signal processing | Mitsubishi-Electric-Corporation-Semiconductor-Group | DIP | 52 | -10°C | 75°C | 74 K |
| M65656FP | Scan converter | Mitsubishi-Electric-Corporation-Semiconductor-Group | QFP | 64 | 0°C | 75°C | 1 M |
| M65657FP | Scan converter | Mitsubishi-Electric-Corporation-Semiconductor-Group | QFP | 64 | 0°C | 75°C | 1 M |
| M65667SP | Picture-in-picture signal processing | Mitsubishi-Electric-Corporation-Semiconductor-Group | DIP | 52 | -20°C | 75°C | 53 K |
| MGA-86563-BLK | 0.5-6GHz low noise GaAs MMIC amplifier | distributor | - | 6 | - | - | 92 K |
| MGA-86563-TR1 | 0.5-6GHz low noise GaAs MMIC amplifier | distributor | - | 6 | - | - | 92 K |
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