| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 5962H9656101QXA | RadHard MSI: SMD. 4-bit up-down binary counter. Class Q, QML. Lead finish solder. Total dose 1E6 rads(Si). | distributor | Ceramic flatpack | 16 | -55°C | 125°C | 10 M |
| 5962H9656101QXA | RadHard MSI: SMD. 4-bit up-down binary counter. Class Q, QML. Lead finish solder. Total dose 1E6 rads(Si). | distributor | Ceramic flatpack | 16 | -55°C | 125°C | 10 M |
| 5962H9656101QXA | RadHard MSI: SMD. 4-bit up-down binary counter. Class Q, QML. Lead finish solder. Total dose 1E6 rads(Si). | distributor | Ceramic flatpack | 16 | -55°C | 125°C | 10 M |
| LC865612A | 8-Bit Single Chip Microcontroller | SANYO-Electric-Co--Ltd- | - | - | - | - | 643 K |
| LC865616A | 8-Bit Single Chip Microcontroller | SANYO-Electric-Co--Ltd- | - | - | - | - | 643 K |
| LC865616A | 8-Bit Single Chip Microcontroller | SANYO-Electric-Co--Ltd- | - | - | - | - | 643 K |
| M65617SP | Picture-in-picture signal processing | Mitsubishi-Electric-Corporation-Semiconductor-Group | DIP | 52 | -10°C | 75°C | 74 K |
| MM6561S | High precision operational amplifier | distributor | - | 8 | -20°C | 75°C | 248 K |
| MPS6561 | 5V, 625mW PNP silicon AF medium power transistor | distributor | - | 3 | -55°C | 150°C | 122 K |
| uPD65612 | CMOS gate arrays | NEC-Electronics-Inc- | QFP | 52 | -40°C | 85°C | 741 K |
| uPD65612 | CMOS gate arrays | NEC-Electronics-Inc- | QFP | 44 | -40°C | 85°C | 741 K |
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