| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 5962H9659601VXX | RadHard MSI: SMD. Dual 4-input NOR gate. Class V, QML. Lead finish optional. Total dose 1E6 rads(Si). | distributor | Ceramic flatpack | 14 | -55°C | 125°C | 10 M |
| IDT70T659S008BF | High-speed 2.5V 128 x 36 asynchronous dual-port static RAM, 8ns | Integrated-Device-Technology-Inc- | fpBGA | 208 | 0°C | 70°C | 344 K |
| IDT70T659S010BF | High-speed 2.5V 128 x 36 asynchronous dual-port static RAM, 10ns | Integrated-Device-Technology-Inc- | fpBGA | 208 | 0°C | 70°C | 344 K |
| IDT70T659S010BFI | High-speed 2.5V 128 x 36 asynchronous dual-port static RAM, 10ns | Integrated-Device-Technology-Inc- | fpBGA | 208 | -40°C | 85°C | 344 K |
| IDT70T659S012BF | High-speed 2.5V 128 x 36 asynchronous dual-port static RAM, 12ns | Integrated-Device-Technology-Inc- | fpBGA | 208 | 0°C | 70°C | 344 K |
| IDT70T659S012BFI | High-speed 2.5V 128 x 36 asynchronous dual-port static RAM, 12ns | Integrated-Device-Technology-Inc- | fpBGA | 208 | -40°C | 85°C | 344 K |
| IDT70T659S012DR | High-speed 2.5V 128 x 36 asynchronous dual-port static RAM, 12ns | Integrated-Device-Technology-Inc- | PQFP | 208 | 0°C | 70°C | 344 K |
| IDT70T659S012DRI | High-speed 2.5V 128 x 36 asynchronous dual-port static RAM, 12ns | Integrated-Device-Technology-Inc- | PQFP | 208 | -40°C | 85°C | 344 K |
| IDT70T659S015BF | High-speed 2.5V 128 x 36 asynchronous dual-port static RAM, 15ns | Integrated-Device-Technology-Inc- | fpBGA | 208 | 0°C | 70°C | 344 K |
| IDT70T659S015DR | High-speed 2.5V 128 x 36 asynchronous dual-port static RAM, 15ns | Integrated-Device-Technology-Inc- | PQFP | 208 | 0°C | 70°C | 344 K |
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