Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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1N5660A | Transient Voltage Suppressor | Microsemi-Corporation | - | - | - | - | 115 K |
AD660AN | -0.3 to 17.0V; 1000mW; monolithic 16-bit serial/byte DACPORT | Analog-Devices | DIP | 24 | -40°C | 85°C | 344 K |
CD421660A | 1600V, 60A general purpose dual diode | distributor | - | - | - | - | 106 K |
CD431660A | 1600V, 60A phase control dual thyristor | distributor | - | - | - | - | 100 K |
CD471660A | 1600V, 60A general purpose dual diode | distributor | - | - | - | - | 106 K |
FSB660A | PNP Low Saturation Transistor | Fairchild-Semiconductor | - | 3 | - | - | 223 K |
NZT660A | PNP Low Saturation Transistor | Fairchild-Semiconductor | - | 3 | - | - | 200 K |
SR1660A | Schottky barrier rectifier. Negative CT. Maximum recurrent peak reverse voltage 60 V. Maximum average forward rectified current 16 A. | distributor | - | 3 | -65°C | 150°C | 172 K |
SR1660A | Schottky barrier rectifier. Common anode. Max repetitive peak reverse voltage 60 V. Max average forward rectified current 16.0 A. | distributor | - | 3 | -65°C | 150°C | 145 K |
SRF1660A | Schottky barrier rectifier. Common anode. Max repetitive peak reverse voltage 60 V. Max average forward rectified current 16.0 A. | distributor | - | 3 | -65°C | 150°C | 138 K |
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