Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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2N6796 | 8A, 100V, 0.180 Ohm, N-Channel Power MOSFET | Intersil-Corporation | - | - | - | - | 140 K |
2SK679A | MOS type field effect transistor | NEC-Electronics-Inc- | - | - | - | - | 414 K |
2SK679A-T | MOS type field effect transistor | NEC-Electronics-Inc- | - | - | - | - | 414 K |
2SK679A-T/JD | MOS type field effect transistor | NEC-Electronics-Inc- | - | - | - | - | 414 K |
2SK679A-T/JM | MOS type field effect transistor | NEC-Electronics-Inc- | - | - | - | - | 414 K |
2SK679A/JD | MOS type field effect transistor | NEC-Electronics-Inc- | - | - | - | - | 414 K |
2SK679A/JM | MOS type field effect transistor | NEC-Electronics-Inc- | - | - | - | - | 414 K |
BD679A | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 87 K |
UPC1679G | Bipolar analog integrated circuit | NEC-Electronics-Inc- | - | - | - | - | 73 K |
UPC1679G-E1 | Bipolar analog integrated circuit | NEC-Electronics-Inc- | - | - | - | - | 73 K |
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