Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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CMX469AD3 | 1200/2400/4800 baud FFSK/MSK modem | Consumer-Microcircuits-Limited | SO | 20 | -40°C | 85°C | 475 K |
CMX469AE2 | 1200/2400/4800 baud FFSK/MSK modem | Consumer-Microcircuits-Limited | SO | 24 | -40°C | 85°C | 475 K |
CMX469AP6 | 1200/2400/4800 baud FFSK/MSK modem | Consumer-Microcircuits-Limited | DIP | 22 | -40°C | 85°C | 475 K |
ICL8069ACSA | Low-voltage reference, 10 ppm/C - max temp. coefficient. | Maxim-Integrated-Producs | SO | 8 | 0°C | 70°C | 102 K |
ICL8069ACSQ2 | Low-voltage reference, 10 ppm/C - max temp. coefficient. | Maxim-Integrated-Producs | - | 2 | 0°C | 70°C | 102 K |
K4R441869AM-CG6 | 256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. | Samsung-Electronic | microBGA(mirrored CS | 62 | 0°C | 70°C | 3 M |
K4R441869AM-CK7 | 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. | Samsung-Electronic | microBGA(mirrored CS | 62 | 0°C | 70°C | 3 M |
K4R441869AM-CK8 | 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. | Samsung-Electronic | microBGA(mirrored CS | 62 | 0°C | 70°C | 3 M |
K4R441869AN-CK7 | 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. | Samsung-Electronic | microBGA(normal CSP) | 62 | 0°C | 70°C | 3 M |
K4R441869AN-CK8 | 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. | Samsung-Electronic | microBGA(normal CSP) | 62 | 0°C | 70°C | 3 M |
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