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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
AS7C3364PFS36A-133TQC3V 64K x 8/512K x 36 pipeline burst synchronous SRAM, 133MHzAlliance-Semiconductor-CorporationTQFP1000°C70°C230 K
AS7C3364PFS36A-150TQC3V 64K x 8/512K x 36 pipeline burst synchronous SRAM, 150MHzAlliance-Semiconductor-CorporationTQFP1000°C70°C230 K
AS7C3364PFS36A-150TQI3V 64K x 8/512K x 36 pipeline burst synchronous SRAM, 150MHzAlliance-Semiconductor-CorporationTQFP100-40°C85°C230 K
AS7C3364PFS36A-166TQC3V 64K x 8/512K x 36 pipeline burst synchronous SRAM, 166MHzAlliance-Semiconductor-CorporationTQFP1000°C70°C230 K
AS7C3364PFS36A-166TQI3V 64K x 8/512K x 36 pipeline burst synchronous SRAM, 166MHzAlliance-Semiconductor-CorporationTQFP100-40°C85°C230 K
HN58S256AT-15256k EEPROM (32-kword x 8-bit), 150ns access timedistributorplastic TSOP280°C70°C88 K
HN58S256AT-20256k EEPROM (32-kword x 8-bit), 200ns access timedistributorplastic TSOP280°C70°C88 K
HN58V66AFP-1064k EEPROM (8-kword x 8-bit) Ready/Busy function, RES function, 100ns access time (2.7V to 4.4V), 70ns access time (4.5V to 5.5V)distributorplastic SOP280°C70°C127 K
HN58V66AP-1064k EEPROM (8-kword x 8-bit) Ready/Busy function, RES function, 100ns access time (2.7V to 4.4V), 70ns access time (4.5V to 5.5V)distributorplastic DIP280°C70°C127 K
HN58V66AT-1064k EEPROM (8-kword x 8-bit) Ready/Busy function, RES function, 100ns access time (2.7V to 4.4V), 70ns access time (4.5V to 5.5V)distributorplastic TSOP280°C70°C127 K
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