| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2N3866AUB | Chip: geometry 1007; polarity NPN | distributor | - | - | - | - | 31 K |
| 6A05 | Silicon rectifier. Case molded plastic. Maximum recurrent peak reverse voltage 50 V. Maximum average forward rectified current 6.0 A. | distributor | - | 2 | -65°C | 150°C | 150 K |
| 6A10 | Silicon rectifier. Case molded plastic. Maximum recurrent peak reverse voltage 1000 V. Maximum average forward rectified current 6.0 A. | distributor | - | 2 | -65°C | 150°C | 150 K |
| BC856ALT1 | 65 V, general purpose transistor | distributor | - | 3 | -55°C | 150°C | 211 K |
| GS882Z36AD-200I | 200MHz 6.5ns 256K x 36 9Mb pipelined and flow through synchronous NBT SRAM | distributor | BGA | 165 | -40°C | 85°C | 1 M |
| GS882Z36AD-225I | 225MHz 6ns 256K x 36 9Mb pipelined and flow through synchronous NBT SRAM | distributor | BGA | 165 | -40°C | 85°C | 1 M |
| GS882Z36AD-225I | 225MHz 6ns 256K x 36 9Mb pipelined and flow through synchronous NBT SRAM | distributor | BGA | 165 | -40°C | 85°C | 1 M |
| GS882Z36AD-250I | 250MHz 5.5ns 256K x 36 9Mb pipelined and flow through synchronous NBT SRAM | distributor | BGA | 165 | -40°C | 85°C | 1 M |
| SR16A0A | Schottky barrier rectifier. Common anode. Max repetitive peak reverse voltage 100 V. Max average forward rectified current 16.0 A. | distributor | - | 3 | -65°C | 150°C | 145 K |
| SRF16A0A | Schottky barrier rectifier. Common anode. Max repetitive peak reverse voltage 100 V. Max average forward rectified current 16.0 A. | distributor | - | 3 | -65°C | 150°C | 138 K |
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