| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 28C256ATC-2 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. | distributor | TSOP | 28 | 0°C | 70°C | 41 K |
| 28C256ATC-3 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. | distributor | TSOP | 28 | 0°C | 70°C | 41 K |
| 28C256ATC-4 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. | distributor | TSOP | 28 | 0°C | 70°C | 41 K |
| 28C256ATI-1 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. | distributor | TSOP | 28 | -40°C | 85°C | 41 K |
| 28C256ATI-2 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. | distributor | TSOP | 28 | -40°C | 85°C | 41 K |
| 28C256ATI-3 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. | distributor | TSOP | 28 | -40°C | 85°C | 41 K |
| 28C256ATI-4 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. | distributor | TSOP | 28 | -40°C | 85°C | 41 K |
| 28C256ATM-1 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. | distributor | TSOP | 28 | -55°C | 125°C | 41 K |
| 28C256ATM-2 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. | distributor | TSOP | 28 | -55°C | 125°C | 41 K |
| 28C256ATM-3 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. | distributor | TSOP | 28 | -55°C | 125°C | 41 K |
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