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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
GVT71256D36B-6.7256K x 36 pipelined SRAM, 150MHzCypress-SemiconductorFBGA1190°C70°C765 K
ISL9V3036D3SEcoSPARK TM 300mJ, 360V, N-Channel Ignition IGBTFairchild-Semiconductor----200 K
M2S56D30AKT-10L265M double data rate SDRAM, 32M x 8 organization, 10ns, Vcc=2.3-2.7, low powerMitsubishi-Electric-Corporation-Semiconductor-GroupsTSOP640°C70°C768 K
M2S56D30AKT-75A265M double data rate SDRAM, 32M x 8 organization, 7.5ns, Vcc=2.3-2.7Mitsubishi-Electric-Corporation-Semiconductor-GroupsTSOP640°C70°C768 K
M2S56D30AKT-75AL265M double data rate SDRAM, 32M x 8 organization, 7.5ns, Vcc=2.3-2.7, low powerMitsubishi-Electric-Corporation-Semiconductor-GroupsTSOP640°C70°C768 K
M2S56D30AKT-75AL265M double data rate SDRAM, 32M x 8 organization, 7.5ns, Vcc=2.3-2.7, low powerMitsubishi-Electric-Corporation-Semiconductor-GroupsTSOP640°C70°C768 K
M2S56D30ATP-10265M double data rate SDRAM, 32M x 8 organization, 10ns, Vcc=2.3-2.7Mitsubishi-Electric-Corporation-Semiconductor-GroupTSOP II660°C70°C768 K
M2S56D30ATP-75265M double data rate SDRAM, 32M x 8 organization, 7.5ns, Vcc=2.3-2.7Mitsubishi-Electric-Corporation-Semiconductor-GroupTSOP II660°C70°C768 K
M2S56D30ATP-75A265M double data rate SDRAM, 32M x 8 organization, 7.5ns, Vcc=2.3-2.7Mitsubishi-Electric-Corporation-Semiconductor-GroupTSOP II660°C70°C768 K
M2S56D30ATP-75L265M double data rate SDRAM, 32M x 8 organization, 7.5ns, Vcc=2.3-2.7, low powerMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP II660°C70°C768 K
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