| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| KM416C256DT-5 | 256K x 16Bit CMOS dynamic RAM with fast page mode, 50ns, 5V | Samsung-Electronic | TSOP II | 40 | 0°C | 70°C | 83 K |
| KM416C256DT-6 | 256K x 16Bit CMOS dynamic RAM with fast page mode, 60ns, 5V | Samsung-Electronic | TSOP II | 40 | 0°C | 70°C | 83 K |
| KM416C256DT-7 | 256K x 16Bit CMOS dynamic RAM with fast page mode, 70ns, 5V | Samsung-Electronic | TSOP II | 40 | 0°C | 70°C | 83 K |
| KM416V256DT-5 | 256K x 16Bit CMOS dynamic RAM with fast page mode, 50ns, 3.3V | Samsung-Electronic | TSOP II | 40 | 0°C | 70°C | 83 K |
| KM416V256DT-6 | 256K x 16Bit CMOS dynamic RAM with fast page mode, 60ns, 3.3V | Samsung-Electronic | TSOP II | 40 | 0°C | 70°C | 83 K |
| KM416V256DT-7 | 256K x 16Bit CMOS dynamic RAM with fast page mode, 70ns, 3.3V | Samsung-Electronic | TSOP II | 40 | 0°C | 70°C | 83 K |
| MC74VHC1GT66DTT1 | ANALOG switch | distributor | - | 5 | -55°C | 125°C | 330 K |
| MC74VHC1GT66DTT3 | ANALOG switch | distributor | - | 5 | -55°C | 125°C | 330 K |
| MT58V512V36DT-10 | 2.5V, 512K x 36 pipelined, DCD syncburst SRAM, 10ns | distributor | TQFP | 100 | 0°C | 70°C | 526 K |
| MT58V512V36DT-6 | 2.5V, 512K x 36 pipelined, DCD syncburst SRAM, 6ns | distributor | TQFP | 100 | 0°C | 70°C | 526 K |
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